Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs
H. C. Schneider (1), J.-P. Wuestenberg (1), O. Andreyev (1), K., Hiebbner (1), L. Guo (1), J. Lange (1), L. Schreiber (2), B. Beschoten (2),, M. Bauer (1), M. Aeschlimann (1) ((1) Physics Department, Kaiserslautern, University, Germany, (2)II. Physikalisches Institut
TL;DR
This study investigates electron-spin relaxation at different surfaces of p-doped GaAs using energy-resolved photoemission and compares it with bulk behavior, revealing surface-dependent variations in spin relaxation times.
Contribution
It provides the first detailed comparison of surface and bulk electron-spin dynamics in p-doped GaAs using combined experimental and theoretical approaches.
Findings
Surface (100) shows increased spin relaxation times at lower energies.
Surface (011) exhibits spin relaxation times similar to bulk GaAs.
Reduced hole density at the (100) surface extends spin relaxation times.
Abstract
Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus spin-flip mechanism. Due to the reduced hole density in the band bending region at the (100) surface the spin-relaxation time increases over two orders of magnitude towards lower energies. At the flat-band (011) surface a constant spin relaxation time in agreement with our measurements and calculations for bulk GaAs is obtained.
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