Metal-Ferroelectric-Metal heterostructures with Schottky contacts I. Influence of the ferroelectric properties

TL;DR

This paper presents a model for Metal-Ferroelectric-Metal structures with Schottky contacts, incorporating ferroelectric polarization, trapping levels, and dielectric properties to analyze contact behavior and electrical characteristics.

Contribution

It introduces a novel model that adapts metal-semiconductor contact theories to ferroelectric materials, accounting for polarization and trapping effects.

Findings

The model explains the influence of ferroelectric polarization on Schottky contact properties.

It provides insights into charge density and depletion width modifications.

The model aids in interpreting current-voltage and capacitance-voltage measurements.

Abstract

A model for Metal-Ferroelectric-Metal structures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing: the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface; a deep trapping level of high concentration; the static and dynamic values of the dielectric constant. Consequences of the proposed model on relevant quantities of the Schottky contact such as built-in voltage, charge density and depletion width, as well as on the interpretation of the current-voltage and capacitance-voltage characteristics are discussed in detail.