Coulomb-Blockade Oscillations in Semiconductor Nanostructures
H. van Houten, C.W.J. Beenakker, A.A.M. Staring

TL;DR
This paper reviews the theoretical and experimental aspects of Coulomb-blockade oscillations in semiconductor nanostructures, including quantum dots and disordered wires, and discusses their behavior in the quantum Hall regime.
Contribution
It provides a comprehensive analysis of Coulomb-blockade oscillations, combining theoretical models with experimental results across various nanostructures and regimes.
Findings
Periodic Coulomb oscillations observed in quantum dots and wires
Amplitude and lineshape depend on device properties and temperature
Quantum Hall regime exhibits Aharonov-Bohm effects influenced by Coulomb interactions
Abstract
I. Introduction (Preface, Basic properties of semiconductor nanostructures). II. Theory of Coulomb-blockade oscillations (Periodicity of the oscillations, Amplitude and lineshape). III. Experiments on Coulomb-blockade oscillations (Quantum dots, Disordered quantum wires, Relation to earlier work on disordered quantum wires). IV. Quantum Hall effect regime (The Aharonov-Bohm effect in a quantum dot, Coulomb blockade of the Aharonov-Bohm effect, Experiments on quantum dots, Experiments on disordered quantum wires).
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices
