Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds

TL;DR

This study investigates the anisotropic electrical resistivity in hexagonal YPtIn and LuAgGe single crystals, linking observed transport anisotropy to their electronic structure through density functional calculations.

Contribution

It provides the first detailed analysis connecting anisotropic transport properties with Fermi surface shape in these specific ternary compounds.

Findings

In-plane resistivity is higher than c-axis resistivity in both materials.

Resistivity anisotropy ratios are approximately 1.4 for YPtIn and 4.2-4.7 for LuAgGe.

Electronic structure calculations reveal the Fermi surface shape influences transport anisotropy.

Abstract

We present anisotropic, zero applied magnetic field, temperature dependent resistivity measurements on hexagonal, non-magnetic, YPtIn and LuAgGe single crystals. For these materials the in-plane resistivity, $\rho_{ab}$, is significantly higher than the $c$ - axis one, $\rho_c$, with $\rho_{ab}/\rho_c \approx 1.4$ for YPtIn and $\approx 4.2 - 4.7$ for LuAgGe. The connection between the electronic structure and the anisotropic transport properties is discussed using density functional calculations that link the observed anisotropy with a specific shape of Fermi surface and anisotropy of the Fermi velocities.