Generation of spin currents via Raman scattering

TL;DR

This paper theoretically demonstrates that stimulated spin flip Raman scattering can generate detectable pure spin currents in doped semiconductors with spin split bands, offering a new method for spin current injection.

Contribution

It introduces a novel theoretical approach to generate spin currents using Raman scattering in doped semiconductors with spin split bands.

Findings

Pure spin currents can be injected in zincblende crystals.

The generated spin current is detectable via optical spectroscopy.

The method provides a new way to control spin transport in semiconductors.

Abstract

We show theoretically that stimulated spin flip Raman scattering can be used to inject spin currents in doped semiconductors with spin split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zincblende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect measurement.