Classical magnetotransport of inhomogeneous conductors

TL;DR

This paper introduces a coupled four-terminal element model to explain non-saturating magnetoresistance in inhomogeneous conductors, simplifying analysis and aiding design of magnetoresistive devices.

Contribution

It presents a novel modeling approach that captures magnetotransport in inhomogeneous conductors and explains observed phenomena in disordered materials.

Findings

Model yields non-saturating magnetoresistance at high fields.

Simplifies finite-element analysis of complex geometries.

Explains magnetoresistance in silver chalcogenides.

Abstract

We present a model of magnetotransport of inhomogeneous conductors based on an array of coupled four-terminal elements. We show that this model generically yields non-saturating magnetoresistance at large fields. We also discuss how this approach simplifies finite-element analysis of bulk inhomogeneous semiconductors in complex geometries. We argue that this is an explanation of the observed non-saturating magnetoresistance in silver chalcogenides and potentially in other disordered conductors. Our method may be used to design the magnetoresistive response of a microfabricated array.