Superconductor-semiconductor magnetic microswitch
C. Castellana, F. Giazotto, M. Governale, F. Taddei, F. Beltram
TL;DR
This paper introduces a hybrid superconductor-semiconductor microswitch that uses magnetic barriers to control Andreev reflection, enabling fast, low-field switching suitable for various electronic applications.
Contribution
It presents a novel superconductor-semiconductor device utilizing magnetic barriers to achieve rapid switching at low magnetic fields.
Findings
Device can switch with fields up to a few millitesla
Operates at frequencies of several gigahertz
Potential applications in microswitches and magnetic field detection
Abstract
A hybrid superconductor--two-dimensional electron gas microdevice is presented. Its working principle is based on the suppression of Andreev reflection at the superconductor-semiconductor interface caused by a magnetic barrier generated by a ferromagnetic strip placed on top of the structure. Device switching is predicted with fields up to some mT and working frequencies of several GHz, making it promising for applications ranging from microswitches and storage cells to magnetic field discriminators.
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