Inversion of magnetoresistance in magnetic tunnel junctions : effect of pinhole nanocontacts
Soumik Mukhopadhyay, I. Das
TL;DR
This paper reports the observation of inverse magnetoresistance in magnetic tunnel junctions with pinhole nanocontacts, caused by competing transport mechanisms that change with bias and temperature.
Contribution
It introduces the effect of pinhole nanocontacts on magnetoresistance, revealing a sign change due to competing ballistic and tunneling transport modes.
Findings
Inverse magnetoresistance observed over a broad temperature range.
Sign change in tunnel magnetoresistance at higher bias and temperature.
Competition between ballistic transport and tunneling explains the phenomenon.
Abstract
Inverse magnetoresistance has been observed in magnetic tunnel junctions with pinhole nanocontacts over a broad temperature range. The tunnel magnetoresistance undergoes a change of sign at higher bias and temperature. This phenomenon is attributed to the competition between the spin conserved ballistic transport through the pinhole contact where the transmission probability is close to unity and spin polarized tunneling across the insulating spacer with weak transmittivity.
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