Phononless thermally activated transport through a disordered array of quantum wires
A. L. Chudnovskiy

TL;DR
This paper analytically investigates phononless plasmon-assisted thermally activated transport in disordered quantum wire arrays, revealing distinct temperature regimes and the influence of electron-electron interactions on resistance behavior.
Contribution
It introduces a detailed analysis of phononless transport mechanisms and compares plasmon and phonon assisted processes in disordered quantum wires, highlighting the role of electron interactions.
Findings
Two temperature regimes with different resistance dependencies identified.
Strong electron-electron interactions qualitatively alter resistance behavior.
High-temperature resistance depends on the Luttinger liquid parameter.
Abstract
Phononless plasmon assisted transport through a long disordered array of finite length quantum wires is investigated analytically. Two temperature regimes, the low- and the high-temperature ones, with qualitatively different temperature dependencies of thermally activated resistance are identified. The characteristics of plasmon assisted and phonon assisted transport mechanisms are compared. Generically strong electron-electron interaction in quantum wires results in a qualitative change of the temperature dependence of thermally activated resistance in comparison to phonon assisted transport. At high temperatures, the thermally activated resistance is determined by the Luttinger liquid interaction parameter of the wires.
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