Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field

TL;DR

This paper theoretically investigates the temperature dependence of 2D magnetoresistance in Si MOSFETs under in-plane magnetic fields, explaining experimental observations through screening theory and spin/valley degeneracy effects.

Contribution

It provides a theoretical explanation for the temperature-independent magnetoresistance in 2D electron systems, highlighting the role of spin and valley degeneracy lifting under magnetic fields.

Findings

Magnetoresistivity remains nearly temperature independent in the metallic regime.

Metallic temperature dependence of magnetoresistance is suppressed near the full spin-polarization field.

Temperature dependence varies with magnetic field strength, strongest at zero field and weakest near the critical polarization field.

Abstract

The temperature dependence of 2D magnetoresistance in an applied in-plane magnetic field is theoretically considered for electrons in Si MOSFETs within the screening theory for long-range charged impurity scattering limited carrier transport. In agreement with recent experimental observations we find an essentially temperature independent magnetoresistivity for carrier densities well into the 2D metallic regime due to the field-induced lifting of spin and, perhaps, valley degeneracies. In particular the metallic temperature dependence of the ballistic magnetoresistance is strongly suppressed around the zero-temperature critical magnetic field ($B_s$) for full spin-polarization, with the metallic temperature dependence strongest at B=0, weakest around $B \sim B_s$, and intermediate at $B \gg B_s$.