Full Counting Statistics in Strongly Interacting Systems: Non-Markovian Effects

TL;DR

This paper develops a theoretical framework for full counting statistics in strongly interacting electron systems with non-Markovian dynamics, providing insights into transport properties in quantum dots and single-electron transistors.

Contribution

It introduces a second-order perturbation approach to analyze non-Markovian effects in full counting statistics of interacting systems.

Findings

Non-Markovian effects significantly influence transport properties.

The approach applies to quantum dots and single-electron transistors.

Conditions for the emergence of non-Markovian effects are discussed.

Abstract

We present a theory of full counting statistics for electron transport through interacting electron systems with non-Markovian dynamics. We illustrate our approach for transport through a single-level quantum dot and a metallic single-electron transistor to second order in the tunnel-coupling strength, and discuss under which circumstances non-Markovian effects appear in the transport properties.