Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method

TL;DR

This paper reports the fabrication of nanogranular MgB2 thin films on SiC buffered Si substrates using an in-situ method, achieving high critical temperature and current density suitable for superconducting applications.

Contribution

It introduces a novel in-situ deposition process for MgB2 films on SiC buffered Si substrates with detailed microstructural and superconducting property analysis.

Findings

Maximum T_C0 above 37 K achieved.

Critical current density around 10^6 A/cm^2 at 11K.

Presence of Mg2Si compound at the film surface.

Abstract

MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C. The Transmission Electron Microscopy analysis confirms the growth of a nanogranular MgB2 film and the presence of a Mg2Si compound at the surface of the film. The 150-200 nm thick films show a maximum zero resistance critical temperature TC0 above 37 K and a critical current density JC ~ 106 A/cm2 at 11K.