Resistance profile measurements on a symmetric electrical pulse induced resistance change device
X. Chen, J. Strozier, N.J. Wu, A. Ignatiev

TL;DR
This study provides the first direct resistance profile measurements in a symmetric Pr0.7Ca0.3MnO3 device, revealing interface-dominant switching behavior and supporting symmetric device models.
Contribution
It presents the first direct resistance profiling of a symmetric electrical pulse induced resistance change device using Kelvin probe microscopy, highlighting interface effects.
Findings
Resistance switching occurs mainly at the interface within 1-3 microns.
Bulk resistance change is observed but less prominent.
Symmetric device behavior aligns with existing symmetric models.
Abstract
We report the first direct measurements of the micro scale resistance profile between the terminals of a two terminal symmetric thin film Pr0.7Ca0.3MnO3 electrical pulse induced resistance change device composed of a Pr0.7Ca0.3MnO3 active layer. The symmetric device is one in which the electrode shape, size, composition, and deposition processing are identical. We show that under certain limitations of pulse switching voltage, such a symmetric electrical pulse induced resistance change device can exhibit either no net device resistance switching at room temperature, or bipolar switching with the resistance hysteresis curve exhibiting a "table leg" structure. The resistance measurements are made using surface scanning Kelvin probe microscopy, which allows for the measurement of the profile of resistance from one electrode, across the Pr0.7Ca0.3MnO3 material and into the second electrode,…
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