Spin injection and accumulation in inhomogeneous semiconductors

TL;DR

This paper investigates how inhomogeneities in doping concentrations affect spin transport in semiconductors, revealing that space-charge effects can significantly enhance spin accumulation and density.

Contribution

It introduces a self-consistent theoretical and numerical approach to model spin transport across inhomogeneous semiconductor boundaries.

Findings

Space-charge effects strongly influence spin transport.

Pronounced spin accumulation occurs at boundaries.

Spin density can be significantly enhanced.

Abstract

We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping concentrations. We use a theoretical and numerical method, presented in this paper, based on a self-consistent treatment of a two-component version of the Boltzmann transport equation. We show that space-charge effects strongly influence the spin transport properties, in particular giving rise to pronounced spin accumulation and spin density enhancement.