Spin transference and magnetoresistance amplification in a transistor

TL;DR

This paper proposes a theoretical method to transfer spin diffusion effects in a three-terminal semiconductor device, enabling room-temperature amplification of magnetoresistance that can be integrated into electronic circuits.

Contribution

It introduces a novel theoretical approach for spin transference in a three-terminal system, achieving magnetoresistance amplification at room temperature.

Findings

Room temperature magnetoresistance amplification demonstrated theoretically.

Spin transference principle enables integration with existing electronics.

Potential for improved spintronic device performance.

Abstract

A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room temperature amplification of the magneto-resistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.