Effect of temperature and bias voltage on the conductance distribution of disordered 1d quantum wires

TL;DR

This paper investigates how temperature and bias voltage influence the conductance distribution in one-dimensional disordered quantum wires, revealing a transition from log-normal to Gaussian distribution with increasing T and V.

Contribution

It provides an analytical and numerical analysis of conductance distribution changes under finite temperature and bias voltage in disordered 1D quantum wires.

Findings

Conductance distribution shifts from log-normal to Gaussian with increasing T and V.

Analytical results are confirmed by numerical simulations.

Finite T and V effects are observable within the model's validity.

Abstract

The statistical properties of the conductance of one dimensional disordered systems are studied at finite bias voltage V and temperature T, in an independent-electron picture. We calculate the complete distribution of the conductance P(G) in different regimes of V, T within a statistical model of resonant tunneling transmission. We find that P(G) changes from the well-known log-normal distribution at T=0 in the linear response regime to a Gaussian distribution at large V, T. The dependence on T and V of average quantities such as < G >, < ln G > is analyzed as well. Our analytical results are confirmed by numerical simulations. We also discuss the limits of validity of the model and conclude that the effects of finite T, V presented here should be observable.