One-Dimensional Hole Gas in Germanium/Silicon Nanowire Heterostructures
Wei Lu, Jie Xiang, Brian P. Timko, Yue Wu, Charles M. Lieber

TL;DR
This paper reports the creation and study of a one-dimensional hole gas in germanium/silicon nanowire heterostructures, demonstrating ballistic transport, conductance quantization, and spin polarization phenomena at low and room temperatures.
Contribution
It introduces a novel 1D hole gas system in Ge/Si nanowires, showing controlled transport properties and quantum effects not previously demonstrated in such nanostructures.
Findings
Observation of conductance quantization indicating ballistic transport.
Detection of a 0.7 structure suggesting spin polarization.
Ballistic transport persists at room temperature.
Abstract
Two-dimensional electron and hole gas systems, enabled through band structure design and epitaxial growth on planar substrates, have served as key platforms for fundamental condensed matter research and high performance devices. The analogous development of one-dimensional (1D) electron or hole gas systems through controlled growth on 1D nanostructure substrates, which could open up opportunities beyond existing carbon nanotube and nanowire systems, has not been realized. Here we report the synthesis and transport studies of a 1D hole gas system based on a free-standing germanium/silicon (Ge/Si) core/shell nanowire heterostructure. Room temperature electrical transport measurements show clearly hole accumulation in undoped Ge/Si nanowire heterostructures, in contrast to control experiments on single component nanowires. Low-temperature studies show well controlled Coulomb blockade…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
