Self-assembly of parallel atomic wires and periodic clusters of silicon on a vicinal Si(111) surface

TL;DR

This study investigates silicon self-assembly on vicinal Si(111) surfaces, revealing temperature-dependent formation of atomic wires and clusters, which could be crucial for silicon-based quantum computing technologies.

Contribution

It demonstrates the temperature-driven transition from atomic wires to periodic clusters on Si(111), providing insights into nanostructure formation mechanisms during homoepitaxial growth.

Findings

Atomic wires of 0.7 nm width form at higher temperatures.

Periodic clusters of ~2 nm diameter appear at lower temperatures.

Structures are relevant for silicon quantum computing applications.

Abstract

Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy (STM). The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one dimensionally aligned periodic clusters of the diameter ~ 2 nm and periodicity 2.7 nm in the very narrow range of growth temperatures between 400 and 300 C. These nanostructures are expected to play an important role in future development of silicon quantum computers. Mechanisms leading to such distinct structures are discussed.