Reorientation Transition in Single-Domain (Ga,Mn)As

TL;DR

This paper investigates how competing anisotropy fields in (Ga,Mn)As cause a magnetization reorientation transition, with implications for thermally-assisted magnetic switching technologies.

Contribution

It reveals the interplay of biaxial and uniaxial anisotropies leads to a reorientation transition explained by a simple single domain model.

Findings

Anisotropy constants vary with magnetization as square and fourth power.

Reorientation transition is associated with weakening of anisotropy.

Results are consistent across the entire temperature range up to T_C.

Abstract

We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in (Ga,Mn)As results in a magnetization reorientation transition and an anisotropic AC susceptibility which is fully consistent with a simple single domain model. The uniaxial and biaxial anisotropy constants vary respectively as the square and fourth power of the spontaneous magnetization across the whole temperature range up to T_C. The weakening of the anisotropy at the transition may be of technological importance for applications involving thermally-assisted magnetization switching.