Inverse Magnetoresistance of Molecular Junctions

TL;DR

This paper predicts a novel inverse magnetoresistance effect in molecular junctions, where the magnetoresistance switches sign with bias, highlighting unique nanoscale magnetic transport phenomena.

Contribution

The study introduces the concept of inverse magnetoresistance in molecular junctions and explains its physical origin, expanding understanding of spin-dependent transport at the nanoscale.

Findings

Magnetoresistance switches from positive to negative with bias.

Inverse magnetoresistance is robust and impurity-independent.

Phenomenon is specific to molecular and atomic nanoscale junctions.

Abstract

We present calculations of spin-dependent electron transport through single organic molecules bridging pairs of iron nanocontacts. We predict the magnetoresistance of these systems to switch from positive to negative with increasing applied bias for both conducting and insulating molecules. This novel inverse magnetoresistance phenomenon is robust, does not depend on the presence of impurities, and is unique to molecular and atomic nanoscale magnetic junctions. Its physical origin is identified and its relevance to experiment and to potential technological applications is discussed.