Angular magnetoresistance oscillations in bilayers in tilted magnetic fields

TL;DR

This paper provides a geometrical interpretation of angular magnetoresistance oscillations (AMRO) in bilayers, linking them to Aharonov-Bohm interference, and discusses potential experimental observations in various bilayer states.

Contribution

It introduces a new geometrical perspective on AMRO in bilayers and explores its implications for different electronic states and experimental setups.

Findings

AMRO can be interpreted as Aharonov-Bohm interference in bilayers.

AMRO observed in layered metals can potentially be seen in semiconducting bilayers.

The paper discusses AMRO in the context of composite-fermion states.

Abstract

Angular magnetoresistance oscillations (AMRO) were originally discovered in organic conductors and then found in many other layered metals. It should be possible to observe AMRO to semiconducting bilayers as well. Here we present an intuitive geometrical interpretation of AMRO as the Aharonov-Bohm interference effect, both in real and momentum spaces, for balanced and imbalanced bilayers. Applications to the experiments with bilayers in tilted magnetic fields in the metallic state are discussed. We speculate that AMRO may be also observed when each layer of the bilayer is in the composite-fermion state.