Tight-Binding model for semiconductor nanostructures
Stefan Schulz, Gerd Czycholl

TL;DR
This paper develops an empirical tight-binding model for semiconductor nanostructures, accurately describing electronic states in quantum dots and allowing analysis of strain and spin-orbit effects with computational efficiency.
Contribution
The paper introduces a simplified $s_cp_a^3$ tight-binding model that effectively reproduces bulk properties and enables large-scale quantum dot simulations, including strain and spin-orbit interactions.
Findings
Accurately reproduces bulk CdSe and ZnSe properties.
Models large quantum dots efficiently.
Analyzes strain and spin-orbit effects on electronic states.
Abstract
An empirical tight-binding (TB) model is applied to the investigation of electronic states in semiconductor quantum dots. A basis set of three -orbitals at the anions and one -orbital at the cations is chosen. Matrix elements up to the second nearest neighbors and the spin-orbit coupling are included in our TB-model. The parametrization is chosen so that the effective masses, the spin-orbit-splitting and the gap energy of the bulk CdSe and ZnSe are reproduced. Within this reduced TB-basis the valence (p-) bands are excellently reproduced and the conduction (s-) band is well reproduced close to the -point, i.e. near to the band gap. In terms of this model much larger systems can be described than within a (more realistic) -basis. The quantum dot is modelled by using the (bulk) TB-parameters for the particular material at those sites occupied…
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