Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor

TL;DR

This study reveals that the spatial structure of a magnetic acceptor state in a zincblende semiconductor depends strongly on the dopant's spin orientation, affecting local density of states and enabling potential spin detection via microscopy.

Contribution

It demonstrates the spin-dependent spatial anisotropy of acceptor states in zincblende semiconductors, linking spin orientation to measurable local density of states variations.

Findings

Acceptor state shape is oblate with short axis aligned to dopant spin.

Local density of states can vary by up to 90% with spin orientation change.

Scanning tunneling microscopy can potentially detect dopant spin orientation.

Abstract

The spin orientation of a magnetic dopant in a zincblende semiconductor strongly influences the spatial structure of an acceptor state bound to the dopant. The acceptor state has a roughly oblate shape with the short axis aligned with the dopant's core spin. For a Mn dopant in GaAs the local density of states at a site 8 angstrom away from the dopant can change by as much by 90% when the Mn spin orientation changes. These changes in the local density of states could be probed by scanning tunneling microscopy to infer the magnetic dopant's spin orientation.