Influence of doping level on the Hall coefficient and on the thermoelectric power in $Nd_{2-x}Ce_xCuO_4$

TL;DR

This study systematically investigates how doping levels in Nd2-xCexCuO4 affect its Hall coefficient and thermoelectric power, revealing sign changes and temperature-dependent behaviors linked to Fermi surface evolution.

Contribution

It provides new insights into the doping-dependent electronic properties and Fermi surface changes in Nd2-xCexCuO4, connecting transport measurements with ARPES observations.

Findings

Hall coefficient and TEP decrease with doping and change sign from negative to positive.

Hall angle follows T^4 in underdoped and T^2 in overdoped regimes.

Fermi surface evolution correlates with transport property changes.

Abstract

Hall coefficient $R_H$ and thermoelectric power TEP are studied systematically in the single crystals $Nd_{2-x}Ce_xCuO_{4+\delta}$ (NCCO) with different x from underdoped to overdoped regime. With increasing doping level, both $R_H$ and TEP decrease and change their sign from negative to positive. A striking feature is that the temperature dependence of the Hall angle follows a $T^4$ behavior in the underdoped regime, while a $T^2$ in the overdoped regime. These behaviors are closely related to the evolution of Fermi surface with doping level observed by ARPES.