Growth kinetics effects on self-assembled InAs/InP quantum dots

TL;DR

This study investigates how growth kinetics influence the morphology and optical properties of InAs/InP quantum dots grown by MOVPE, demonstrating control over their size, density, and emission wavelength through process parameters.

Contribution

It provides a systematic analysis of how growth rate and temperature affect quantum dot characteristics, introducing a method to tune their optical emission.

Findings

Quantum dot density and size can be controlled by growth parameters.

Height distribution normalized to mean collapses onto a Gaussian.

Emission wavelength shifts with growth condition adjustments.

Abstract

A systematic manipulation of the morphology and the optical emission properties of MOVPE grown ensembles of InAs/InP quantum dots is demonstrated by changing the growth kinetics parameters. Under non-equilibrium conditions of a comparatively higher growth rate and low growth temperature, the quantum dot density, their average size and hence the peak emission wavelength can be tuned by changing efficiency of the surface diffusion (determined by the growth temperature) relative to the growth flux. We further observe that the distribution of quantum dot heights, for samples grown under varying conditions, if normalized to the mean height, can be nearly collapsed onto a single Gaussian curve.