An optimised algorithm for ionized impurity scattering in Monte Carlo simulations

TL;DR

This paper introduces an optimized ionized impurity scattering model for Monte Carlo semiconductor simulations, significantly reducing computation time while accurately capturing small-angle scattering effects.

Contribution

It presents a new anisotropic scattering algorithm that improves efficiency and accuracy over standard methods in Monte Carlo simulations.

Findings

Simulation time reduced by approximately 100 times

Accurately models small-angle scatterings

Improves realism of impurity scattering representation

Abstract

We present a new optimised model of Brookes-Herring ionized impurity scattering for use in Monte Carlo simulations of semiconductors. When implemented, it greatly decreases the execution time needed for simulations (typically by a factor of the order of 100), and also properly incorporates the great proportion of small angle scatterings that are neglected in the standard algorithm. It achieves this performance by using an anisotropic choice of scattering angle which accurately mimics the true angular distribution of ionized impurity scattering.