Interface-dominated Growth of a Metastable Novel Alloy Phase

TL;DR

This study demonstrates the interfacial growth of a metastable Cu$_3$Au alloy phase in Au/Cu multilayers, highlighting how deposition parameters and interfacial confinement influence phase formation and stability.

Contribution

It introduces a novel growth technique for a metastable alloy phase via interface engineering in multilayers, emphasizing the role of interfacial width and sputtering conditions.

Findings

Successful growth of a ~300 nm Cu$_3$Au alloy layer with the D0$_{23}$ structure.

Interfacial confinement enhances the formation and stabilization of the metastable phase.

The alloy phase remains stable up to ~150°C after annealing.

Abstract

A new \textit{D0$_{23}$} metastable phase of Cu$_3$Au is found to grow at the interfaces of Au/Cu multilayers deposited by magnetron sputtering. The extent of formation of this novel alloy phase depends upon an optimal range of interfacial width primarily governed by the deposition wattage of the dc-magnetron used. Such interfacially confined growth is utilized to grow a $\sim$ 300 nm thick Au/Cu multilayer with thickness of each layer nearly equal to the optimal interfacial width which was obtained from secondary ion mass spectrometry (SIMS) data. This growth technique is observed to enhance the formation of the novel alloy phase to a considerable extent. SIMS depth profile also indicates that the mass fragment corresponding to Cu$_3$Au occupies the whole film while x-ray diffraction (XRD) shows almost all the strong peaks belonging to the \textit{D0$_{23}$} structure. High resolution cross-sectional transmission electron microscopy (HR-XTEM) shows the near perfect growth of the individual layers and also the lattice image of the alloy phase in the interfacial region. Vacuum annealing of the alloy film and XRD studies indicate stabilization of the \textit{D0$_{23}$} phase at $\sim$ 150$^{\circ}$C. The role of interfacial confinement, the interplay between interfacial strain and free energy and the hyperthermal species generated during the sputtering process are discussed.