Schottky-barrier induced spin dephasing in spin injection
Y. Y. Wang, M. W. Wu
TL;DR
This paper investigates how the electric field from a Schottky barrier in a ferromagnet-semiconductor junction causes spin dephasing via the Rashba effect, using Monte Carlo simulations.
Contribution
It introduces a detailed Monte Carlo analysis of spin dephasing caused by Schottky barrier-induced electric fields in spin injection.
Findings
Large electric fields in the depletion region induce significant spin dephasing.
The Rashba effect plays a key role in spin dephasing during injection.
Schottky barriers critically affect spin coherence in spintronic devices.
Abstract
An ensemble Monte Carlo method is used to study the spin injection through a ferromagnet-semiconductor junction where a Schottky barrier is formed. It is shown that the Schottky-barrier-induced electric field which is confined in the depletion region and parallel to the injection direction, is very large. This electric field can induce an effective magnetic field due to the Rashba effect and cause strong spin dephasing.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.