Magnetoresistance Anisotropy of Polycrystalline Cobalt Films: Geometrical-Size- and Domain-Effects
Woosik Gil, Detlef Goerlitz, Michael Horisberger, Juergen Koetzler

TL;DR
This study investigates the anisotropic magnetoresistance (AMR) in polycrystalline cobalt films, revealing a geometrical-size-effect (GSE) linked to spin-orbit interactions and domain structures, with implications for understanding magnetic scattering.
Contribution
It demonstrates the existence of a geometrical-size-effect in AMR of Co films and links it to spin-orbit interaction effects and domain structures, expanding understanding of MR anisotropy.
Findings
Polar AMR can be twice as large as transverse AMR at saturation.
The GSE ratio remains unchanged with temperature despite overall AMR reduction.
Domain structures significantly influence MR behavior below magnetic saturation.
Abstract
The magnetoresistance (MR) of 10 nm to 200 nm thin polycrystalline Co-films, deposited on glass and insulating Si(100), is studied in fields up to 120 kOe, aligned along the three principal directions with respect to the current: longitudinal, transverse (in-plane), and polar (out-of-plane). At technical saturation, the anisotropic MR (AMR) in polar fields turns out to be up to twice as large as in transverse fields, which resembles the yet unexplained geometrical size-effect (GSE), previously reported for Ni- and Permalloy films. Upon increasing temperature, the polar and transverse AMR's are reduced by phonon-mediated sd-scattering, but their ratio, i.e. the GSE remains unchanged. Basing on Potters's theory [Phys.Rev.B 10, 4626(1974)], we associate the GSE with an anisotropic effect of the spin-orbit interaction on the sd-scattering of the minority spins due to a film texture. Below…
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