Selective epitaxial growth of sub-micron complex oxide structures by amorphous SrTiO3

TL;DR

This paper introduces a chemical-free method for fabricating sub-micron complex oxide structures using selective epitaxial growth with amorphous SrTiO3 barriers, preserving film integrity and enabling precise patterning.

Contribution

It presents a novel, etchant-free technique combining pulsed laser deposition and electron-beam lithography for creating isolated complex oxide structures at sub-micron scales.

Findings

Successfully fabricated sub-micron YBCO structures.

Demonstrated stable and isolated complex oxide patterns.

Preserved film integrity without chemical etchants.

Abstract

A chemical-free technique for fabricating submicron complex oxide structures has been developed based on selective epitaxial growth. The crystallinity and hence the conductivity of the complex oxide is inhibited by amorphous SrTiO3 (STO). Using a combination of pulsed laser deposition and electron-beam lithography, amorphous STO barriers are first deposited on a single crystal substrate. A thin film is then deposited on the patterned substrate with the amorphous STO barriers acting to electrically and physically isolate different regions of the film. Since no chemical or physical etchants come in contact with the deposited film, its integrity and stability are preserved. This technique has successfully produced sub-micron YBCO and LCMO structures.