Charged exciton emission at 1.3 $\mu$m from single InAs quantum dots grown by metalorganic chemical vapor deposition

TL;DR

This study investigates the emission characteristics of single InAs quantum dots grown by MOCVD, revealing neutral and charged exciton states at 1.3 μm with strong confinement features.

Contribution

It provides detailed spectroscopic analysis of charged exciton emission at telecom wavelength from InAs quantum dots grown by MOCVD, highlighting their excitonic states and energy structure.

Findings

Emission at 1300 nm from single QDs

Observation of neutral and charged excitons and biexcitons

Biexciton binding energy of 3.1 meV

Abstract

We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV, indicating strong confinement.