Symmetry of $k\cdot p$ Hamiltonian in pyramidal InAs/GaAs quantum dots: Application to the calculation of electronic structure
Nenad Vukmirovi\'c, Dragan Indjin, Vladimir D. Jovanovi\'c, Zoran, Ikoni\'c, Paul Harrison

TL;DR
This paper presents a symmetry-based method for calculating the electronic structure of pyramidal InAs/GaAs quantum dots, accounting for strain and magnetic effects, revealing novel miniband behaviors.
Contribution
It introduces a symmetry-adapted basis for 8-band $k ext{·}p$ Hamiltonian calculations in quantum dots, enabling detailed analysis of electronic states under various conditions.
Findings
Ground hole state symmetry changes with dot spacing
Magnetic field influences miniband splitting and overlap
Strain affects miniband effective mass and state symmetry
Abstract
A method for the calculation of the electronic structure of pyramidal self-assembled InAs/GaAs quantum dots is presented. The method is based on exploiting the exact symmetry of the 8-band Hamiltonian with the strain taken into account via the continuum mechanical model. The operators representing symmetry group elements were represented in the plane wave basis and the group projectors were used to find the symmetry adapted basis in which the corresponding Hamiltonian matrix is block diagonal with four blocks of approximately equal size. The quantum number of total quasi-angular momentum is introduced and the states are classified according to its value. Selection rules for interaction with electromagnetic field in the dipole approximation are derived. The method was applied to calculate electron and hole quasibound states in a periodic array of vertically…
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