Spin noise spectroscopy in GaAs
M. Oestreich, M. Roemer, R. J. Haug, and D. Haegele
TL;DR
This paper demonstrates a non-invasive method to measure electron spin dynamics in GaAs using spin noise spectroscopy, providing insights into spin relaxation and g-factor without disturbing the system.
Contribution
It introduces the application of Faraday rotation noise spectroscopy to bulk GaAs for undisturbed electron spin measurements, including relaxation time and g-factor estimation.
Findings
Measured electron spin relaxation time in GaAs.
Determined electron Lande g-factor at low temperatures.
Found good agreement with Poisson-based theoretical model.
Abstract
We observe the noise spectrum of electron spins in bulk GaAs by Faraday rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron spin dynamics in semiconductors. We measure exemplarily the electron spin relaxation time and the electron Lande g-factor in n-doped GaAs at low temperatures and find good agreement of the measured noise spectrum with an unpretentious theory based on Poisson distribution probability.
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