Structural and transport properties of epitaxial NaxCoO2 thin films
A. Venimadhav, A. Soukiassian, D. A. Tenne, Qi Li, X. X. Xi, D. G., Schlom, R. Arroyave, Z. K. Liu, H. P. Sun, Xiaoqing Pan, Minhyea Lee, and N., P. Ong
TL;DR
This study investigates the structural and electrical transport characteristics of epitaxial NaxCoO2 thin films grown on sapphire, highlighting how Na vapor pressure influences Na content and resulting properties.
Contribution
It demonstrates a method to control Na concentration in epitaxial NaxCoO2 films via annealing in Na vapor, affecting their transport properties.
Findings
Na vapor pressure controls Na concentration in films
Different Na levels lead to distinct transport behaviors
Films are c axis oriented with specific in-plane alignment
Abstract
We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films with different Na concentrations, which showed distinct transport properties.
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