Variable resistance at the boundary between semimetal and excitonic insulator
Massimo Rontani, L. J. Sham
TL;DR
This paper models transport across a semimetal-excitonic insulator junction, revealing high interface resistance influenced by junction transparency and identifying promising systems for experimental validation.
Contribution
It provides a theoretical analysis of boundary transport in semimetal-excitonic insulator systems, highlighting the role of excitons and charged carriers.
Findings
High interface resistance sensitive to junction transparency
Transport dominated by neutral excitons and charged carriers
Identification of systems suitable for experimental testing
Abstract
We solve the two-band model for the transport across a junction between a semimetal and an excitonic insulator. We analyze the current in terms of two competing terms associated with neutral excitons and charged carriers, respectively. We find a high value for the interface resistance, extremely sensitive to the junction transparency. We explore favorable systems for experimental confirmation.
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