Nanomechanical Measurements of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As
S. C. Masmanidis, H. X. Tang, E. B. Myers, Mo Li, K. De Greve, G., Vermeulen, W. Van Roy, and M. L. Roukes
TL;DR
This paper presents a novel nanoelectromechanical approach to directly measure magnetostriction and magnetic anisotropy in (Ga,Mn)As, revealing insights into magnetoelastic behavior mediated by holes.
Contribution
It introduces a high-resolution electromechanical method for simultaneous measurement of magnetostriction and anisotropy in a dilute magnetic semiconductor.
Findings
First direct measurement of magnetostriction in (Ga,Mn)As
Mapping of magnetostriction and anisotropy over temperature
Comparison with theoretical models of hole-mediated magnetoelasticity
Abstract
A (Ga,Mn)As nanoelectromechanical resonator is used to obtain the first direct measurement of magnetostriction in a dilute magnetic semiconductor. Field-dependent magnetoelastic stress induces shifts in resonance frequency that can be discerned with a high resolution electromechanical transduction scheme. By monitoring the field dependence, the magnetostriction and anisotropy field constants can be simultaneously mapped over a wide range of temperatures. These results, when compared with theoretical predictions, appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.
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