Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation

TL;DR

This paper compares various multiple-gate SOI MOSFET architectures at 25 nm gate length using Monte Carlo simulations, highlighting their advantages in controlling short channel effects and optimizing performance.

Contribution

It provides a comparative analysis of planar and non-planar multiple-gate MOSFETs, emphasizing the suitability of planar double-gate structures for high performance and integration density.

Findings

Planar double-gate MOSFET offers high current drive and low leakage.

Double-gate architecture requires less stringent body and oxide thickness.

Planar double-gate is preferable over triple- and quadruple-gate structures.

Abstract

Multiple-gate SOI MOSFETs with gate length equal to 25 nm are compared using device Monte Carlo simulation. In such architectures, the short channel effects may be controlled with much less stringent body and oxide thickness requirements than in single-gate MOSFET. Our results highlight that planar double-gate MOSFET is a good candidate to obtain both high current drive per unit-width and weak subthreshold leakage with large integration density and aggressive delay time, compared to non planar devices such as triple-gate or quadruple-gate structures.