Simultaneous electric and magnetic field induced nonvolatile memory

TL;DR

This paper explores how electric and magnetic fields can induce nonvolatile memory effects in a magnetoresistive material, demonstrating their potential for multilevel memory storage across a wide temperature range.

Contribution

It reveals the combined influence of electric and magnetic fields on resistive switching and phase coexistence, enabling multilevel nonvolatile memory in complex oxides.

Findings

Electric field induces resistive switching across 20-300 K.

Magnetic field influences phase coexistence and memory states.

Both effects enable multilevel nonvolatile memory capabilities.

Abstract

We investigate the electric field induced resistive switching effect and magnetic field induced fraction enlargement on a polycrystalline sample of a colossal magnetoresistive compound displaying intrinsic phase coexistence. Our data show that the electric effect (presumably related to the presence of inhomogeinities) is present in a broad temperature range(300 to 20 K), being observable even in a mostly homogeneous ferromagnetic state. In the temperature range in which low magnetic field determines the phase coexistence fraction, both effects, though related to different mechanisms, are found to determine multilevel nonvolatile memory capabilities simultaneously.