Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes

TL;DR

This paper predicts a bistable behavior in the Curie temperature as a function of voltage in ferromagnetic semiconductor resonant tunneling diodes, based on simulations combining electrostatics, quantum transport, and mean-field theory.

Contribution

It introduces the concept of voltage-induced Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes, combining multiple simulation methods.

Findings

Bistability in Curie temperature-voltage characteristics predicted

Simulations integrate electrostatics, quantum transport, and mean-field ferromagnetism

Potential for voltage-controlled magnetic state switching

Abstract

We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and ballistic quantum transport combined with a mean-field theory description of ferromagnetism in dilute magnetic semiconductors.