Generation of single colour centers by focussed nitrogen implantation

TL;DR

This paper demonstrates a method to create nitrogen-vacancy color centers in diamond through focused nitrogen implantation, verified by microscopy and spectroscopy, with an average of two nitrogen atoms needed per defect.

Contribution

It introduces a precise implantation technique for generating single NV centers and quantifies the nitrogen dose required for defect formation.

Findings

Single NV centers created via nitrogen implantation.

Optical and EPR spectra confirm defect identity.

Approximately two nitrogen atoms needed per defect.

Abstract

Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and EPR spectra unambiguously show that the produced defect is the nitrogen-vacancy colour center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average two 2 MeV nitrogen atoms need to be implanted per defect center.