Exchange Biasing of the Ferromagnetic Semiconductor (Ga,Mn)As by MnO
K. F. Eid, M. B. Stone, O. Maksimov, T. C. Shih, K. C. Ku, W. Fadgen,, C. J. Palmstrom, P. Schiffer, N. Samarth
TL;DR
This paper reviews the progress in inducing exchange bias in the ferromagnetic semiconductor (Ga,Mn)As through proximity to MnO, including detailed material characterization and magnetic property analysis.
Contribution
It provides a comprehensive characterization of MnO layers and explores how exchange and coercive fields vary with temperature and cooling field in (Ga,Mn)As.
Findings
Successful characterization of MnO layers using multiple techniques
Demonstrated variation of exchange bias with temperature
Analyzed the dependence of coercive fields on cooling conditions
Abstract
We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.
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