Electromigration in thin tunnel junctions with ferromagnetic/nonmagnetic: nanoconstrictions, local heating, and direct and wind forces
J. Ventura, J. B. Sousa, Y. Liu, Z. Zhang, P. P. Freitas

TL;DR
This study investigates how electromigration affects resistance switching in FM/NM/I/FM tunnel junctions, revealing the roles of heating, direct, and wind forces, and how a non-magnetic Ta layer influences the CIS effect.
Contribution
It provides new insights into electromigration mechanisms in tunnel junctions with non-magnetic layers, highlighting the dominance of direct forces in Ta and wind forces in FM layers.
Findings
Resistance switching increases with current up to a plateau at 65 mA.
High currents cause irreversible barrier degradation.
Electromigration direction is opposite in FM/NM/I/FM compared to FM/I/FM due to force competition.
Abstract
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier (I). Here we study how the CIS effect is influenced by a thin non-magnetic (NM) Ta layer, deposited just below the AlO insulating barrier in tunnel junctions of the type FM/NM/I/FM (FM=CoFe). Enhanced resistance switching occurs with increasing maximum applied current (), until a plateau of constant CIS is reached for mA (CIS60%) and above. However, such high electrical currents also lead to a large (9%) irreversible resistance decrease, indicating barrier degradation. Anomalous voltage-current characteristics with negative derivative were also observed near and this effect is here…
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