Quantum kinetic description of Coulomb effects in one-dimensional nano-transistors

TL;DR

This paper develops a quantum kinetic framework combining electrostatics and Coulomb interactions to simulate electronic transport and charging effects in one-dimensional nano-transistors, including carbon nanotubes and CMOS devices.

Contribution

It introduces a multi-configurational Green's function approach that accounts for electron number fluctuations in 1D nano-transistors, advancing simulation capabilities.

Findings

Single-electron charging effects are naturally captured.

The model accurately describes Coulomb effects in 1D nano-transistor transport.

Applicable to carbon nanotube and CMOS transistor simulations.

Abstract

In this article, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's function approach is presented, accounting for fluctuating electron numbers. On this basis we provide a theory for the simulation of electronic transport and quantum charging effects in nano-transistors, such as gated carbon nanotube and whisker devices and one-dimensional CMOS transistors. Single-electron charging effects arise naturally as a consequence of the Coulomb repulsion within the channel.