Spin lifetimes and strain-controlled spin precession of drifting electrons in zinc blende type semiconductors

TL;DR

This paper investigates how strain and electric fields influence spin lifetimes and precession in drifting electrons within zinc blende semiconductors, revealing strain-specific effects and temperature-dependent spin relaxation mechanisms.

Contribution

It provides a detailed analysis of strain-controlled spin precession and quantifies the deformation potential in n-GaAs, advancing understanding of spin transport under strain.

Findings

Strain along [110] induces measurable spin precession.

Strain along [100] has no significant effect.

Spin lifetime decreases with increasing electric field due to electron heating.

Abstract

We study the transport of spin polarized electrons in n-GaAs using spatially resolved continuous wave Faraday rotation. From the measured steady state distribution, we determine spin relaxation times under drift conditions and, in the presence of strain, the induced spin splitting from the observed spin precession. Controlled variation of strain along [110] allows us to deduce the deformation potential causing this effect, while strain along [100] has no effect. The electric field dependence of the spin lifetime is explained quantitatively in terms of an increase of the electron temperature.