Dynamic avalanche breakdown of a p-n junction: deterministic triggering of a plane streamer front

TL;DR

This paper investigates the dynamic avalanche breakdown in high voltage p-n junctions, highlighting the role of deep-level centers and band-to-band tunneling in triggering the streamer front.

Contribution

It introduces a new understanding of the deterministic triggering mechanisms of streamer fronts, emphasizing the influence of deep-level centers and tunneling processes.

Findings

Deep-level centers like sulfur and EL2 initiate the streamer front.

Field-enhanced ionization of deep centers causes deterministic triggering.

Zener tunneling triggers the front in deep-level free structures.

Abstract

We discuss the dynamic impact ionization breakdown of high voltage p-n junction which occurs when the electric field is increased above the threshold of avalanche impact ionization on a time scale smaller than the inverse thermogeneration rate. The avalanche-to-streamer transition characterized by generation of dense electron-hole plasma capable to screen the applied external electric field occurs in such regimes. We argue that the experimentally observed deterministic triggering of the plane streamer front at the electric field strength above the threshold of avalanche impact ionization but yet below the threshold of band-to-band tunneling is generally caused by field-enhanced ionization of deep-level centers. We suggest that the process-induced sulfur centers and native defects such as EL2, HB2, HB5 centers initiate the front in Si and GaAs structures, respectively. In deep-level free structures the plane streamer front is triggered by Zener band-to-band tunneling.