Nanoscale Defect Formation on InP(111) Surfaces after MeV Sb Implantation

TL;DR

This study investigates nanoscale defect formation and surface roughness changes on InP(111) surfaces after 1.5 MeV Sb ion implantation, revealing defect structures, roughness behavior, and lattice amorphization at critical fluence.

Contribution

It provides detailed analysis of nanoscale defect structures and surface roughness evolution on InP surfaces post-ion implantation, combining microscopy and Raman spectroscopy.

Findings

Nanoscale defect structures form on InP surface after Sb implantation.

Surface roughness initially increases then decreases after a critical fluence.

InP lattice becomes amorphous at the critical fluence.

Abstract

We have studied the surface modifications as well as the surface roughness of the InP(111) surfaces after 1.5 MeV Sb ion implantations. Scanning Probe Microscope (SPM) has been utilized to investigate the ion implanted InP(111) surfaces. We observe the formation of nanoscale defect structures on the InP surface. The density, height and size of the nanostructures have been investigated here as a function of ion fluence. The rms surface roughness, of the ion implanted InP surfaces, demonstrates two varied behaviors as a function of Sb ion fluence. Initially, the roughness increases with increasing fluence. However, after a critical fluence the roughness decreases with increasing fluence. We have further applied the technique of Raman scattering to investigate the implantation induced modifications and disorder in InP. Raman Scattering results demonstrate that at the critical fluence, where the decrease in surface roughness occurs, InP lattice becomes amorphous.