Binding energy of exciton complexes determined by the tunneling current of single electron transistor under optical pumping

TL;DR

This paper presents a theoretical study of how optical pumping influences tunneling currents in a single electron transistor, enabling determination of exciton complex binding energies through Coulomb oscillations.

Contribution

It introduces a novel method to determine exciton complex binding energies using tunneling current measurements in SETs under optical pumping.

Findings

Optical pumping creates holes in the quantum dot, opening new tunneling channels.

Tunneling current exhibits Coulomb oscillations related to exciton complexes.

Binding energies of exciton, trion, and biexciton states can be extracted from these oscillations.

Abstract

We theoretically study the tunnelling current of a single electron transistor (SET) under optical pumping. It found that holes in the quantum dot(QD) created by optical pumping lead to new channels for the electrons tunnelling from emitter to collector. As a consequence, an electron can tunnel through the QD via additional channels, characterized by the exciton, trion and biexciton states. The binding energy of exciton complexes can be determined by the Coulomb oscillatory tunnelling current.