Resistive relaxation in field-induced insulator-metal transition of a (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayer manganite single crystal

TL;DR

This study investigates the slow resistive relaxation in a bilayer manganite crystal during a field-induced insulator-metal transition, revealing a stretched exponential behavior linked to magnetic relaxation.

Contribution

It demonstrates the relationship between resistive and magnetic relaxation in bilayer manganites using an effective medium approximation.

Findings

Remanent resistance follows a stretched exponential relaxation.

Resistive relaxation is closely related to magnetic relaxation.

Relaxation dynamics can be described by an effective medium model.

Abstract

We have investigated the resistive relaxation of a (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ single crystal, in order to examine the slow dynamics of the field-induced insulator to metal transition of bilayered manganites. The temporal profiles observed in remanent resistance follow a stretched exponential function accompanied by a slow relaxation similar to that obtained in magnetization and magnetostriction data. We demonstrate that the remanent relaxation in magnetotransport has a close relationship with magnetic relaxation that can be understood in the framework of an effective medium approximation by assuming that the first order parameter is proportional to the second order one.