Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures

TL;DR

This paper investigates the temperature-driven flow lines of Hall and magnetoconductance in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures, confirming a unified scaling theory that describes these flow lines.

Contribution

It provides experimental validation of a recent unified scaling theory for both integer and fractional quantum Hall effects in spin-polarized 2D electron systems.

Findings

Flow lines are well described by the unified scaling theory.

One (_{xy},_{xx}) point determines the entire flow line.

Experimental data supports the theory's predictions.

Abstract

The temperature driven flow lines of the Hall and dissipative magnetoconductance data (\sigma_{xy},\sigma_{xx}) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/Al_{x}Ga_{1-x}As heterostructures. The flow lines are rather well described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D electron system which predicts that one (\sigma_{xy},\sigma_{xx}) point determines a complete flow line.