Photo-excited zero-resistance states in the GaAs/AlGaAs system

TL;DR

This paper reports on the observation of microwave-induced zero-resistance states in high mobility two-dimensional electron systems in GaAs/AlGaAs at very low temperatures, highlighting the conditions under which resistance vanishes.

Contribution

It provides experimental results demonstrating microwave-excited zero-resistance states near specific magnetic field ratios in GaAs/AlGaAs systems.

Findings

Zero-resistance states occur near B = [4/(4j+1)] B_f

States are induced by microwave excitation at liquid helium temperatures

Experimental data supports the existence of these states in high mobility 2D electron systems

Abstract

The microwave-excited high mobility two-dimensional electron system exhibits, at liquid helium temperatures, vanishing resistance in the vicinity of $B = [4/(4j+1)] B_{f}$, where $B_{f} = 2\pi\textit{f}m^{*}/e$, m$^{*}$ is an effective mass, e is the charge, and \textit{f} is the microwave frequency. Here, we summarize some experimental results.